Bachelor’s degree with major on electrical or relevant domains.
• Minimum 8+ years relevant working experience on MOSFET/transistor/diode quality engineering or qualification development.
• Knowledge and experience on GaN FET.
• Demonstrates ability to successfully influence win-win cross-functional dynamics.
• Excellent written and verbal communication skills in English
• Good at collaboration and conflict management.
base深圳，上海，北京，杭州，大连都可